Modify the Schottky contact between fluorine-doped tin oxide front electrode and p-a-SiC:H by carbon dioxide plasma treatment
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- 作者：Tiantian Li ; Xiaodan Zhang ; xdzhang@nankai.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Jian Ni ; Jia Fang ; Dekun Zhang ; Jian Sun ; Changchun Wei ; Shengzhi Xu ; Guangcai Wang ; Ying Zhao
- 关键词：Carbon dioxide plasma ; SnO2 ; F front electrode ; Interface ; Amorphous silicon solar cell
- 刊名：Solar Energy
- 出版年：2016
- 出版时间：September 2016
- 年：2016
- 卷：134
- 期：Complete
- 页码：375-382
- 全文大小：1563 K
文摘
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CO2 plasma treatment is a simple and effective way to modify the interface of p-a-SiC:H/FTO.
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The behavior of the radicals in COP and the mechanism of the COP treatment on FTO was proposed.
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Both of the Voc and FF of the a-Si:H solar cells have been improved based on the COP treatment.