Preparation and photoluminescence properties of Ce³⁺-doped Si nanowires

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• 作者：Ying Cai Peng^a ; ^{ycpeng2002@163.com" class="auth_mail" title="E-mail the corresponding author} ; Zhi Dong Fan^b ; Li Li^c ; Chuo Liu^a ; Lei Ma^a
• 关键词：Photoluminescence ; Ce3+ doped ; Si nanowires
• 刊名：Optik - International Journal for Light and Electron Optics
• 出版年：2016
• 出版时间：November 2016
• 年：2016
• 卷：127
• 期：22
• 页码：10311-10315
• 全文大小：964 K

文摘

In this paper, silicon nanowires were grown directly from n-(100) single crystal silicon based on solid-liquid-solid mechanism with Au-Al films as metallic catalyst. Then Ce-doped Si nanowires were researched. The influences of the different doping temperatures (1000–1200 °C), doping durations (15–60 min) and gas flow rate of N₂(0–1000 sccm) on the luminescence of Ce³⁺ were experimentally investigated. The morphology and microstructure of the Si nanowires, the photoluminescence properties and growth crystal orientation were characterized and analyzed by the scanning electron microscopy, the Hitachi F-4600 fluorescence spectrophotometer, the FLS-920 full functional fluorescence spectrometer and X-ray powder diffraction. The results show that the Ce-doped Si nanowires have a strong blue luminescencent with an emission peak position at 405 nm (⁵D → ²F_5/2) when the doping temperature is 1200 °C, the grow time of Si nanowires is 30 min and the optimize excitation wavelength is 328 nm. The fluorescence quantum efficiency is as high as 60.57%. The color coordinates of Ce-doped Si nanowires is (0.16, 0.03) based on the distribution of emission spectral and CIE-1931 standard formula. Ce-doped Si nanowires have potential applications in the areas of lighting and display because of its strong luminous intensity and relatively high fluorescence quantum efficiency.