Atomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-2 × 4 interface: An in-situ synchrotron radiation photoemission study
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- 作者：Chiu-Ping Chenga ; cpcheng@mail.ncyu.edu.tw" class="auth_mail" title="E-mail the corresponding author ; Wan-Sin Chena ; b ; Keng-Yung Linc ; Guo-Jhen Weia ; Yi-Ting Chenga ; Yen-Hsun Linc ; Hsien-Wen Wanc ; Tun-Wen Pib ; pi@nsrrc.org.tw" class="auth_mail" title="E-mail the corresponding author ; Raymond T. Tungd ; Jueinai Kwoe ; raynien@phys.nthu.edu.tw" class="auth_mail" title="E-mail the corresponding author ; Minghwei Hongc ; mhong@phys.ntu.edu.tw" class="auth_mail" title="E-mail the corresponding author
- 关键词：Schottky barrier height ; III&ndash ; V semiconductor ; Synchrotron radiation photoemission
- 刊名：Applied Surface Science
- 出版年：2017
- 出版时间：30 January 2017
- 年：2017
- 卷：393
- 期：Complete
- 页码：294-298
- 全文大小：1589 K
文摘
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The interaction of Ag on a p-type α2 GaAs(001)-2 × 4 surface has been studied.
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The dipole formation mechanism of the Ag/GaAs(001)-2 × 4 interface is proposed.
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Determination of the SBH prior to metal formation is found.
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Inadequacy of the metal-induced gap-state model for explaining the SBH is evident.