Charge-state related effects in sputtering of LiF by swift heavy ions

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• 作者：W. Assmann^a ; B. Ban-d'Etat^b ; M. Bender^c ; P. Boduch^b ; P.L. Grande^d ; H. Lebius^b ; D. Leli&egrave ; vre^b ; G.G. Marmitt^d ; H. Rothard^b ; T. Seidl^c ; D. Severin^c ; K.-O. Voss^c ; M. Toulemonde^b ; ^{toulemonde@ganil.fr} ; C. Trautmann^c ; ^e
• 关键词：Electronic energy loss ; Sputtering ; LiF ; Jet component
• 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
• 出版年：2017
• 出版时间：1 February 2017
• 年：2017
• 卷：392
• 期：Complete
• 页码：94-101
• 全文大小：1632 K
• 卷排序：392

文摘

Sputtering experiments with swift heavy ions in the electronic energy loss regime were performed by using the catcher technique in combination with elastic recoil detection analysis. The angular distribution of particles sputtered from the surface of LiF single crystals is composed of a jet-like peak superimposed on a broad isotropic distribution. By using incident ions of fixed energy but different charges states, the influence of the electronic energy loss on both components is probed. We find indications that isotropic sputtering originates from near-surface layers, whereas the jet component may be affected by contributions from depth up to about 150 nm.