Synergetic combination of Te content and deposition temperature to optimize thermoelectric properties using sputtered bismuth telluride films
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- 作者：Hongjing Shanga ; b ; c ; Hongwei Gub ; c ; Yang Zhonga ; Fazhu Dingb ; c ; dingfazhu@mail.iee.ac.cn" class="auth_mail" title="E-mail the corresponding author ; Guicun Lia ; guicunli@qust.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Fei Qub ; c ; Huiliang Zhangb ; c ; Zebin Dongb ; c ; He Zhangb ; c ; Weiwei Zhoub ; c
- 关键词：Bismuth telluride films ; Sputtering ; Te content ; Thermoelectric properties
- 刊名：Journal of Alloys and Compounds
- 出版年：2017
- 出版时间：5 January 2017
- 年：2017
- 卷：690
- 期：Complete
- 页码：851-855
- 全文大小：1416 K
文摘
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The Te abundant bismuth telluride films were deposited by co-sputtering.
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Some excess Te can be regarded as dopant of nanostructure.
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More grain boundary was introduced into the structure of films.
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The Seebeck coefficient and power factor of bismuth telluride films were improved.