Enhanced photoactivity of visible light responsive W incorporated FeVO₄ photoanode for solar water splitting

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• 作者：Soumya Kanti Biswas ; Jin-Ook Baeg
• 关键词：W incorporated FeVO4 film ; Narrow band gap ; Photoanode ; Photoelectrochemical water oxidation ; n-Type doping
• 刊名：International Journal of Hydrogen Energy
• 出版年：13 November, 2013
• 年：2013
• 卷：38
• 期：34
• 页码：14451-14457
• 全文大小：1213 K

文摘

Herein, we report the preparation, characterization and investigation of previously unexplored W incorporated iron vanadate (FeVO₄) electrodes for solar light driven water oxidation in photoelectrochemical cell. The W incorporated FeVO₄ films on F-doped SnO₂ substrates have been prepared by layer-by-layer deposition of metal-organic precursor and subsequent thermal decomposition at 550聽掳C in air. The synthesized films with a band gap of about 2.06聽eV are responsive to visible light up to wavelength of 鈭?00聽nm, i.e. being able to harvest 鈭?5% of the solar spectrum. The W incorporated FeVO₄ photoanodes are active materials for photoelectrochemical water oxidation and, yield a significantly enhanced (2.5 fold higher) photocurrent in comparison to pristine FeVO₄ photoanodes. This improvement can be attributed to increased n-type conductivity by W⁶⁺ ion doping in the FeVO₄ lattice. The incident photon to current conversion efficiency achieved with developed photoanodes is as high as 6.5% at 400聽nm.