Thermoelectric performance of p-type Nd1−xInxTe3 fabricated by high pressure sintering method
详细信息    查看全文
文摘
High pressure (6 GPa) sintering method was used and nanostructure was produced. Several carrier scattering models in conjunction with a parabolic band theory was analyzed. The domain scattering mechanism is alloy scattering. The temperature dependence of Fermi level EF and effective mass were figured out.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700