SnO₂ thin films from metalorganic precursors: Synthesis, characterization, microelectronic processing and gas-sensing properties

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• 作者：Mauro Epifani ; Luca Francioso ; Pietro Siciliano ; Andreas Helwig ; Gerhard Mueller ; Raü ; l Dí ; az ; Jordi Arbiol ; Joan R. Morante
• 关键词：Chemoresistive sensors ; Solution deposition ; Microelectronic processing ; Microstructure
• 刊名：Sensors and Actuators B: Chemical
• 出版年：2007
• 出版时间：10 June 2007
• 年：2007
• 卷：124
• 期：1
• 页码：217-226
• 全文大小：1089 K

文摘

SnO₂ thin films were prepared by spin-coating of Sn(II) 2-ethylhexanoate solutions onto silicon substrates, followed by heat-treatment at 500 °C. From the study of the starting solutions and of the final films by Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) it was concluded that the film formation started with weak physical interactions between the individual precursor molecules and then proceeded through an extensive cross-linking as the heat-treatment took place. In this way mechanically resistant and well-adhering sensing layers were prepared. High-resolution transmission electron microscopy (HRTEM), in agreement with XRD, further revealed that the sensing films heat-treated at 500 °C consisted of SnO₂ grains with diameters of about 10 nm. The films heat-treated at 500 °C were able to withstand a full microelectronic processing sequence, including wet etching, Ti/Pt contact formation, and heater processing on the backside of the sensor substrates. Gas-sensing tests have evidenced responses to CO and NO₂ that are comparable to commercial thick film sensors, demonstrating a clear potential toward the achievement of high-performance low power consumption gas-sensing devices.