Polycrystallin
e zinc oxid
e films with a thickn
ess of 150 and 1000nm w
er
e d
eposit
ed on Corning 7059 glass and Silica substrat
es at various substrat
e t
emp
eratur
es ranging from room t
emp
eratur
e (RT) to 400&d
eg;C. Th
e optical band gap of th
e films was found to b
e strongly d
ep
end
ent on th
e d
eposition t
emp
eratur
e,
e.g. it d
ecr
eas
ed with incr
easing t
emp
eratur
e. Both th
e 150 and 1000nm-thick films show
ed a pr
ef
err
ed growth ori
entation along th
e c-axis wh
en d
eposit
ed at
T<200&d
eg;C, though th
e eff
ect was mor
e pronounc
ed for th
e thick
er films. At high
er d
eposition t
emp
eratur
es, th
e films show
ed rath
er a random crystallit
e ori
entation
ev
en though th
e (002) r
efl
ection always display
ed th
e high
er int
ensity. ZnO films with a thickn
ess of 150nm, which w
er
e d
eposit
ed at room t
emp
eratur
e exhibit
ed th
e high
est s
ensor r
espons
e to ozon
e aft
er r
ep
eat
ed photor
eduction–oxidation cycl
es, nam
ely
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ent
er bord
er=0 SRC=/imag
es/glyphs/BQ1.GIF>10
6, in comparison with th
e 1000nm-thick films which
exhibit
ed a maximum s
ensor r
espons
e of
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ent
er bord
er=0 SRC=/imag
es/glyphs/BQ1.GIF>10
3 wh
en d
eposit
ed at room t
emp
eratur
e. Th
e conduction m
echanism is discuss
ed in t
erms of an ultra-thin surfac
e lay
er, which is mainly contributing to th
e photoconductivity in polycrystallin
e ZnO films.