Surface modification of gallium phosphide caused by swift (200 MeV) silver ions

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• 作者：S.K. Dubey ; ^{skdubey@physics.mu.ac.in}
• 关键词：Swift silver ion irradiation ; Gallium phosphide ; Atomic force microscopy ; Raman scattering
• 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
• 出版年：2017
• 出版时间：1 February 2017
• 年：2017
• 卷：392
• 期：Complete
• 页码：46-50
• 全文大小：1165 K
• 卷排序：392

文摘

Analysis of atomic force microscopic images of the gallium phosphide samples irradiated with different fluences showed the presence of hillocks at the surface of gallium phosphide. At higher fluences, the big size hillocks having arbitrary shape are formed. Phonon confinement model employed to first order Raman scattering from longitudinal optical phonon mode revealed the decrease in phonon coherence length with the increase in ion fluence. Stress induced in the sample and phonon coherence length saturate at lower ion fluence, suggests that the swift silver ion irradiation in gallium phosphide do not create the significant damage upon impact.