ALD growth, thermal treatments and characterisation of Al₂O₃ layers

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• 作者：E. Ghiraldelli ; C. Pelosi ; E. Gombia ; G. Chiavarotti ; L. Vanzetti
• 关键词：Al₂O₃ ; High K dielectrics ; ALD growth ; C-V measurements ; XPS analysis ; Thermal treatment
• 刊名：Thin Solid Films
• 出版年：2008
• 出版时间：3 November 2008
• 年：2008
• 卷：517
• 期：1
• 页码：434-436
• 全文大小：245 K

文摘

Al₂O₃ films with thickness ranging from 20 to 300 nm are grown in a home-made reactor using atomic layer deposition with trimethylaluminum and water on different semiconductor substrates. The deposited films are investigated in terms of composition and electrical properties. Annealing treatments appear necessary in order to obtain films with good insulating properties, although the same treatments do not affect the stoichiometry of the main components.