Improvements on thermal stability of graphene and top gate graphene transistors by Ar annealing

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• 作者：Bo Liu^a ; In-Shiang Chiu^a ; Chao-Sung Lai^a ; ^b ; ^c ; ^d ; ^{cslai@mail.cgu.edu.tw}
• 关键词：Graphene ; Thermal stability ; Raman spectrum ; Graphene transistors ; High mobility ; Low defects
• 刊名：Vacuum
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：137
• 期：Complete
• 页码：8-13
• 全文大小：1362 K
• 卷排序：137

文摘

Relatively low defects emerge in graphene after Ar annealing. Dirac point of graphene is within ±0.2 V after 400 °C–600 °C Ar annealing. Graphene still exhibits more than 3500 cm2 V−1 s−1 mobility in top-gated field effect transistor under 600 °C Ar annealing.