A new system for sodium flux growth of bulk GaN. Part II: in situ investigation of growth processes

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• 作者：Paul Von Dollen ; ^{paul.vondollen@gmail.com} ; Siddha Pimputkar ; Mohammed Abo Alreesh ; Shuji Nakamura ; James S. Speck
• 关键词：A1. Na flux method ; A1. Growth rate ; A2. Growth from high temperature solutions ; A2. Sodium flux growth ; B1. Nitrides ; B1. III-Nitrides ; B1. Bulk GaN
• 刊名：Journal of Crystal Growth
• 出版年：2016
• 出版时间：15 December 2016
• 年：2016
• 卷：456
• 期：Complete
• 页码：67-72
• 全文大小：1028 K
• 卷排序：456

文摘

Sodium flux growth of GaN on HVPE GaN seeds. +c-plane growth rates >50 µm/h. Use of in situ temperature and pressure monitoring for growth prediction.