A novel method to achieve 1.54μm light emission from silica thin films

详细信息    查看全文

• 作者：Xiao ; Zhisong ; Xu ; Fei ; Zhang ; Tonghe ; Cheng ; Guoan ; Gu ; Lanlan ; Wan ; Xun
• 关键词：Ion implantation ; Photoluminescence ; Erbium ; Si nanocrystal ; Silicon oxide
• 刊名：Journal of Luminescence
• 出版年：2002
• 出版时间：March, 2002
• 年：2002
• 卷：96
• 期：2-4
• 页码：195-200
• 全文大小：200 K

文摘

Erbium and silicon were dual implanted into thermally grown SiO₂ film on Si by a metal vapor vacuum arc ion source, followed by rapid thermal annealing at 900–1100°C for 20s. 1.54μm photoluminescence was observed at room temperature and 77K. Rutherford backscattering spectrometry shows that Er ions mainly distribute near the surface, and the highest Er concentration exceeds the magnitude of 10²¹cm⁻³. Needle nanocrystalline silicon (nc-Si) is formed on the surface of the implanted layer. X-ray photoelectron spectrum analyzed the concentration proportion of Er, Si, SiO₂ in the implanted layer, excess Si concentration ranges from 11.1 % to 22.7 % . The Er³⁺ acts as an isolated ion luminescence center, most excitation energy may be obtained from the electron–hole combination at the interface of nc-Si/SiO₂ (or c-Si/SiO₂), and then the energy transfer to Er³⁺, results in the light emission of 1.54μm.