Low shot noise GaAs/AlGaAs heterojunction phototransistors grown by MBE with a δ-doped base
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- 作者：Luo ; Hailin ; Chan ; Hoi Kwan ; Chang ; Yuchun ; Wang ; Y. ; Dai ; Yisong ; Zhang ; Xinfa
- 关键词：81.15.H ; 73.40 ; 85.60.D ; 73.50.T ; A3.Molecular beam epitaxy ; B2.Semiconducting gallium arsenide ; B3.Heterojunction semiconductor devices
- 刊名：Journal of Crystal Growth
- 出版年：2001
- 出版时间：July, 2001
- 年：2001
- 卷：227-228
- 期：Complete
- 页码：233-237
- 全文大小：134 K
文摘
Novel GaAs/AlGaAs heterojunction phototransistors with a δ-doped base have been fabricated. Very high gain and low output noise have been measured. The measured noise is composed of shot noise associated with collector quiescent bias current and amplified shot noise due to collector leak current for non-passivated devices. For well-passivated devices, the measured noise is, as predicted previously [Y. Wang, E.S. Yang, J. Appl. Phys. 74 (1993) 6978], just composed of the shot noise associated with collector quiescent bias current. The high gain and low intrinsic noise characteristics of these transistors make them very promising in weak light detection.