Synthesis of GaN films on porous silicon substrates

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• 作者：Zhihua DONG ; Chengshan XUE ; Huizhao ZHUANG ; Haiyong GAO ; Deheng TIAN ; Yuxin WU
• 关键词：semiconductor technology ; GaN films ; magnetron sputtering ; porous silicon
• 刊名：Rare Metals
• 出版年：2006
• 出版时间：February 2006
• 年：2006
• 卷：25
• 期：1
• 页码：96-98
• 全文大小：322 K

文摘

A novel and simple method was employed to synthesize GaN films on porous silicon (PS) substrates. GaN films were obtained through the reaction between NH₃ and Ga₂O₃ films deposited on the substrates with magnetron sputtering. Since GaN and PS are all good materials for luminescence, it is expected to obtain some new properties from GaN on PS. The samples were analyzed with X-ray diffraction (XRD) to identify crystalline structure. Fourier transmit infrared (FTIR) spectrum was used to analyze the chemical state of the samples. The films were observed with scanning electron microscopy (SEM) and were found to consist of many big crystal grains. Photoluminescence (PL) spectrum was used to illuminate the optical property of the GaN films.