Surface model of formation of silicon nitride on monocrystalline silicon

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• 作者：Sassi ; Z. ; Chafik ; K. ; Bureau ; J.C. ; El Hajbi ; A.
• 关键词：Surface model ; Silicon nitride ; Thermodynamical computations ; Reaction mechanism ; Thermal nitridation
• 刊名：Applied Surface Science
• 出版年：2002
• 出版时间：February 14, 2002
• 年：2002
• 卷：187
• 期：1-2
• 页码：3-17
• 全文大小：492 K

文摘

We present a model for the formation of silicon nitride on monocrystalline Si(100)-(2×1) at 300K using gaseous ammonia (NH₃) as nitridation reagent. FT-IR was used to identify surface species. From crystallographic and thermodynamic considerations the model shows the different steps of formation of Si₃N₄ and the chemical species formed during this process. The model is in full agreement with literature data obtained by various physico-chemical techniques. The model explains what happens at high temperatures on the atomic scale and allows us to derive some important conclusions about the last steps of nitridation.