Mg acceptors in GaN: Dependence of the g-anisotropy on the doping concentration

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• 作者：Detlev M Hofmann ; Wolfgang Burkhardt ; Frank Leiter ; Walter von Fö ; rster ; Helder Alves ; Albrecht Hofstaetter ; Bruno K Meyer ; Nikolai G Romanov ; Hiroshi Amano ; Isamu Akasaki
• 关键词：GaN ; p-Doping ; Mg-acceptor ; Magnetic resonance
• 刊名：Physica B
• 出版年：1999
• 出版时间：15 December 1999
• 年：1999
• 卷：273-274
• 期：Complete
• 页码：43-45
• 全文大小：93 K

文摘

Mg acceptors in GaN epitaxial layers grown by metal–organic vapour-phase epitaxy were investigated by optically detected magnetic resonance (ODMR) spectroscopy. The magnetic resonances were detected on the magnetic circular dichroism (MCD) of the acceptor bound exciton (Mg⁰X) in the near bandgap region, and in the infrared spectral range on the MCD of the hole ionisation transition Mg⁰+hν→Mg⁻+h_VB. The observed g-values of the Mg⁰ acceptors range for g from 2.102 to 2.065 and for g from 1.94 to 2.00, respectively. These variations depend on the Mg doping concentration.