Growth, structure and carrier transport properties of Ga2O3 epitaxial film examined for transparent field-effect transistor
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- 作者：Kosuke Matsuzaki ; Hidenori Hiramatsu ; Kenji Nomura ; Hiroshi Yanagi ; Toshio Kamiya ; Masahiro Hirano and Hideo Hosono
- 关键词：Laser ablation ; Electrical properties and measurements ; Optoelectronic devices
- 刊名：Thin Solid Films
- 出版年：2006
- 出版时间：1 February 2006
- 年：2006
- 卷：496
- 期：1
- 页码：37-41
- 全文大小：565 K
文摘
Growth conditions of heteroepitaxial thin films of tin-doped Ga2O3 were surveyed from the viewpoint of visible application to field-effect transistors (FETs). Films were deposited by pulsed laser deposition, and post-annealing was examined to improve film structures. Atomically flat surfaces were obtained for films grown on yttria-stabilized zirconia (111) plane and post-annealed at 1400 °C, but they were insulating. Conductive heteroepitaxial films applicable to FETs were obtained on α-Al2O3 (0001) at specific deposition conditions, i.e. substrate temperatures from 500 to 550 °C and oxygen pressures from 5 × 10− 4 to 1 × 10− 3 Pa. It was found that the resulting epitaxial films have a crystal structure different from that of β-Ga2O3. The crystal lattice for the films is determined to be orthorhombic with a large possibility of a higher-symmetry hexagonal or rhombohedral system. The films exhibited high transparency in the near infrared–deep ultraviolet region and had bandgap of 4.9 eV. The operation of top-gate MISFETs using the Ga2O3 film for the n channel was demonstrated.