Modeling growth rate of HfO₂ thin films grown by metal–organic molecular beam epitaxy

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• 作者：Myoung-Seok Kim ; Young-Don Ko ; Tae-Houng Moon ; Jae-Min Myoung and Ilgu Yun
• 关键词：HfO₂ ; Gate dielectric ; Thin film ; Process modeling ; MOMBE
• 刊名：Microelectronics Journal
• 出版年：2006
• 出版时间：February 2006
• 年：2006
• 卷：37
• 期：2
• 页码：98-106
• 全文大小：665 K

文摘

HfO₂ dielectric layers were grown on the p-type Si (100) substrate by metal–organic molecular beam epitaxy (MOMBE). Hafnium-tetra-butoxide, Hf(O·t-C₄H₉)₄ was used as a Hf precursor and Argon gas was used as a carrier gas. The thickness of the HfO₂ film and intermediate SiO₂ layer were measured by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The properties of the HfO₂ layers were evaluated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), high frequency (HF) capacitance–voltage (C–V) measurement, and current–voltage (I–V) measurement. C–V and I–V measurements have shown that HfO₂ layer grown by MOMBE has a high dielectric constant (k) of 20–22 and a low-level of leakage current density. The growth rate is affected by various process variables such as substrate temperature, bubbler temperature, Ar and O₂ gas flows and growth time. Since the ratio of O₂ and Ar gas flows are closely correlated, the effect of variations in O₂/Ar flow ratio on growth rate is also investigated using statistical modeling methodology.