Tailoring transparence in MoO_x/Ag/MoO_x electrode through Ag by O₂/Ar plasma exposure

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• 作者：Tzu-Wei Lin^a ; ^c ; Pang-Shiu Chen^b ; Zheng-Ying Wang^b ; Kai-Wei Zhuang^b ; Su-Ching Chiu^b ; Cheng-Hsiung Peng^b ; Sheng-Wei Lee^a ; ^{schon0911@gmail.com" class="auth_mail" title="E-mail the corresponding author}
• 关键词：MoO3 ; Silver ; Sputtering ; Transparent conductive oxide ; Plasma treatment
• 刊名：Ceramics International
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：43
• 期：1
• 页码：308-315
• 全文大小：1664 K

文摘

In this study, amorphous MoO_x films and Ag metal films were deposited on soda-lime glass via a sputtering system at room temperature. The experimental results indicate that MoO_x films prepared with a 6% O₂/Ar flow rate exhibit an amorphous phase with high transparency and an optical band gap of 2.7 eV. In-situ O₂/Ar plasma was adopted to further modify the surface of the Ag mid-layer after deposition. This approach can enhance the visible transmittance of MoO_x and Ag-based multilayers with the same sheet resistance. The polygrains oriented along the (111) and (200) directions in the inserted Ag thin films were adopted to supply carriers into the MoO_x film and decrease the sheet resistance of the MoO_x and Ag-based multilayer. The multilayer structure exhibited a sufficiently large Ag thickness (>10 nm), low resistance, and visible transmittance to serve as a transparent conductive electrode. The dependence of the Ag thickness, MoO_x thickness, and plasma treatment time on the optical and electrical properties of Ag/MoO_x and symmetric MoO_x/Ag/MoO_x were also explored. A figure of merit (FOM) of 5.3×10^−2 (Ω^−1) was achieved at the visible wavelength of 550 nm for a MoO_x/Ag/MoO_x stacked layer with a 10-nm-thick Ag layer and a 30-nm-thick MoO₃ layer. Such a MoO_x/Ag/MoO_x stacked structure might be a promising electrode in potential applications of transparent conductive oxides.