Characterization of N-doped DLC Thin Films Prepared by Hydrocarbons Pyrolysis Method

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• 作者：Yuma Murata^a ; ^{murata@mail.uec.jp" class="auth_mail" title="E-mail the corresponding author} ; Cheow-Keong Choo^b ; Hiroshi Ono^a ; Yutaka Nagai^a ; Katsumi Tanaka^a
• 关键词：Nitrogen-doped DLC ; amorphous carbon nitride ; hydrocarbons pyrolysis ; Raman spectroscopy ; X-ray photoelectron spectroscopy
• 刊名：Materials Today: Proceedings
• 出版年：2016
• 出版时间：2016
• 年：2016
• 卷：3
• 期：supp_S2
• 页码：S197-S202
• 全文大小：238 K

文摘

Nitrogen-doped DLC thin films prepared by a hydrocarbons pyrolysis method were characterized with Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), UV-Vis spectroscopy and a four-terminal current-voltage measuring method in terms of their structural, bonding, optical and electrical properties. Raman spectra showed that doping N atoms in the DLC films caused the full width at half maximum (FWHM) values of G-peak to be broader, the G-peak positions to shift downward and the I_D/I_G ratio to be lower than non-doped DLC films. These indicate that N-doping to DLC induces the reduction of the sp² based nanocluster size. The chemical bonding state of the N-doped DLC films was homogeneous in bulk, which was evaluated with XPS by Ar sputtering of the DLC films. The XPS spectra of C1s and N1s showed that the hybridized C ratio (sp³C/sp²C) of the deconvoluted C1s spectra increased due to the formation of the N bonded to sp³C (N-sp³C). In addition, the optical band gap and the resistance increased by doping N atoms in the DLC films. Our experimental results show that N-doping leads to an increase of the sp³C/sp²C and the resistance as well as the optical band gap of the DLC films prepared with the hydrocarbons pyrolysis method.