High mobility field effect transistor of SnO_x on glass using HfO_x gate oxide

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• 作者：Chanjong Ju ; Chulkwon Park ; Hyeonseok Yang ; Useong Kim ; Young Mo Kim ; Kookrin Char ; ^{kchar@phya.snu.ac.kr" class="auth_mail" title="E-mail the corresponding author}
• 关键词：Transparent oxide semiconductor ; Field effect transistor ; SnO2(Tin oxide) ; HfO2(Hafnium oxide) ; Oxide electronics
• 刊名：Current Applied Physics
• 出版年：2016
• 出版时间：March 2016
• 年：2016
• 卷：16
• 期：3
• 页码：300-304
• 全文大小：1003 K

文摘

We report on the electrical properties of SnO_x thin films made by reactive sputtering of a Sn metal target and the performance of their field effect transistors with HfO_x gate insulator on glass substrates. We investigated the electrical properties of SnO_x films by controlling the oxygen partial pressure during growth. The mobility of the SnO_x films on glass substrates was as high as 20.28 cm² V⁻¹ s⁻¹ after post-deposition annealing at 400 °C, while its carrier density was 4.21 × 10¹⁸ cm⁻³. Moreover, we fabricated high mobility thin film transistors using polycrystalline SnO_x as the channel and the atomic-layer-deposited HfO_x as the gate oxide. The field-effect mobility values were 5.01–20.15 cm² V⁻¹ s⁻¹, the I_on/I_off were 10³∼10⁴, and the subthreshold swing were 1.05–1.60 V dec⁻¹. We discuss the origins for the non-ideal performance and the future direction for improvement.