Nanowire width dependence of data retention and endurance characteristics in nanowire SONOS flash memory
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- 作者：Jin Hyung Choi ; Chong Gun Yu ; Jong Tae Park ; jtpark@incheon.ac.kr" class="auth_mail" title="E-mail the corresponding author
- 关键词：SONOS flash memory ; Memory performance ; Nanowire width dependence
- 刊名：Microelectronics Reliability
- 出版年：2016
- 出版时间：September 2016
- 年：2016
- 卷：64
- 期：Complete
- 页码：215-219
- 全文大小：2003 K
文摘
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Investigation on the nanowire width (W) dependence of memory performance in nanowire SONOS flash memory
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Narrow device has advantages in terms of a fast P/E speed and the endurance characteristics.
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Narrow device has disadvantage in terms of the decreased data retention time and power consumption.