Amorphous InGaZnO thin film transistors with sputtered silver source/drain and gate electrodes

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• 作者：Qi Wu ; Ling Xu ; Jianeng Xu ; Haiting Xie ; Chengyuan Dong ; ^{cydong@sjtu.edu.cn" class="auth_mail" title="E-mail the corresponding author}
• 关键词：Thin film transistors ; InGaZnO ; Silver electrodes ; Sputtering
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2016
• 出版时间：15 June 2016
• 年：2016
• 卷：48
• 期：Complete
• 页码：23-26
• 全文大小：1417 K

文摘

The amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) with sputtered silver source/drain (S/D) and gate electrodes were investigated and developed. The sputtered single-film Ag was confirmed to be unfit for the electrodes of a-IGZO TFTs because of its bad contact with a-IGZO and atom diffusion into insulators. Accordingly the sputtered Mo films were proposed to serve as the capping layers, indicating that the 20-nm-thick Mo could effectively form ohmic contact with the a-IGZO, prevent the Ag diffusion into the SiO_x, and make good adhesion to the glass substrates. The devices with multi-layer S/D and gate electrodes (Mo/Ag/Mo) were successfully fabricated, exhibiting the reasonably good performance and thus proving the application of the sputtered silver electrodes into a-IGZO TFTs was possible.