Ambient effect on thermal stability of amorphous InGaZnO thin film transistors
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- 作者：Jianeng Xu ; Qi Wu ; Ling Xu ; Haiting Xie ; Guochao Liu ; Lei Zhang ; Chengyuan Dong ; cydong@sjtu.edu.cn" class="auth_mail" title="E-mail the corresponding author
- 关键词：Amorphous InGaZnO (a-IGZO) ; Thin film transistor (TFT) ; Thermal stability ; Ambient gas
- 刊名：Solid State Electronics
- 出版年：2016
- 出版时间：December 2016
- 年：2016
- 卷：126
- 期：Complete
- 页码：170-174
- 全文大小：1364 K
文摘
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Air could apparently improve the thermal stability of the a-IGZO TFTs.
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The ambient oxygen was proved to exhibit the evident improvements in the thermal stability of the a-IGZO TFTs.
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The negative Vth shifts of the a-IGZO TFTs at high temperatures were hardly influenced by the extra electrons donated by H2O.
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The higher ambient oxygen content in the surrounding atmosphere made the thermal generation of the oxygen vacancies in the active layers more difficult.