Effect of thermal annealing on the optical properties of CdGeAs₂ wafers

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• 作者：Wei Huang ; Beijun Zhao ; ^{bjzhao@scu.edu.cn} ; Shifu Zhu ; Zhiyu He ; Baojun Chen ; Jiawei Li ; You Yu ; Jingjing Tang ; Weijia Liu
• 关键词：A1. Annealing ; A1. Properties characterization ; A1. Transmittance ; B1. Single crystal ; B2. CdGeAs2
• 刊名：Journal of Crystal Growth
• 出版年：2013
• 出版时间：1 January, 2013
• 年：2013
• 卷：362
• 期：Complete
• 页码：291-295
• 全文大小：1172 K

文摘

A crack-free CdGeAs₂ single crystal 15 mm in diameter and 50 mm in length was grown in a three-zone tubular furnace by the modified vertical Bridgman method. During the annealing processes, the effects of treatments with different atmosphere, different temperatures and time were investigated. The as-grown and annealed wafers were characterized using X-ray diffractometer (XRD), energy dispersive spectroscopy (EDS), Fourier transform infrared spectroscopy (FTIR) and IR microscope. Conclusively, the results confirm annealing could improve the optical qualities of as-grown CdGeAs₂ crystal. The best result was obtained under cover-up with CdGeAs₂ polycrystalline powder at 450 ¡ãC for 150 h and the IR transmittance of the wafer measured by FTIR was up to 48.65 % nearby 5.5 ¦Ìm and exceeded 50 % in the range of 8-12 ¦Ìm. Additionally, the monolithic homogeneity of the crystal has also been greatly improved after annealing under cover-up with polycrystalline powder.