n-VO2/p-GaN based nitride-oxide heterostructure with various thickness of VO2 layer grown by MBE
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- 作者：Minhuan Wanga ; Jiming Biana ; b ; jmbian@dlut.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Hongjun Suna ; Weifeng Liua ; Yuzhi Zhangb ; Yingmin Luoa
- 关键词：Vanadium oxide ; p-GaN ; Molecular beam epitaxy ; Phase transition
- 刊名：Applied Surface Science
- 出版年：2016
- 出版时间：15 December 2016
- 年：2016
- 卷：389
- 期：Complete
- 页码：199-204
- 全文大小：2166 K
文摘
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High quality VO2 films with precisely controlled thickness were grown on p-GaN/sapphire substrates by oxide molecular beam epitaxy (O-MBE).
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A distinct reversible SMT phase transition was observed for the n-VO2/p-GaN based nitride-oxide heterostructure.
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The clear rectifying transport characteristics originated from the n-VO2/p-GaN interface were demonstrated before and after SMT of the VO2 over layer.
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The XPS analyses confirmed the valence state of V in VO2 films was principally composed of V4+ with trace amount of V5+.
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The design and modulation of the n-VO2/p-GaN based heterostructure devices will benefit significantly from these achievements.