Microstructural and electrical properties of Cu-germanide formed on p-type Ge wafer
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- 作者：I. Jyothia ; V. Janardhanama ; Jun Yeon Hwangb ; Won-Ki Leeb ; Yun Chang Parkc ; Hyon Chol Kangd ; Sung-Nam Leee ; Chel-Jong Choia ; cjchoi@jbnu.ac.kr" class="auth_mail" title="E-mail the corresponding author
- 关键词：Cu-germanide ; RTA ; Agglomeration ; Epitaxial Cu3Ge ; Specific contact resistivity
- 刊名：Journal of Alloys and Compounds
- 出版年：2016
- 出版时间：15 January 2016
- 年：2016
- 卷：655
- 期：Complete
- 页码：198-202
- 全文大小：1533 K
文摘
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Material properties of Cu3Ge were investigated as a function of RTA temperature.
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Orthorhombic Cu3Ge was only phase formed, irrespective of RTA temperature.
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RTA at 400 °C led to the formation of Cu3Ge having highly uniform surface and interface.
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Minimum specific contact resistivity was obtained after RTA process at 400 °C.
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After 700 °C, inverted pyramidal Cu3Ge islands aligned along Ge <110> were epitaxially grown on Ge.