Identifying the spatial position and properties of traps in GaN HEMTs using current transient spectroscopy
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- 作者：Xiang Zheng ; Shiwei Feng ; shwfeng@bjut.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Yamin Zhang ; Junwei Yang
- 关键词：Current transients ; GaN ; High-electron mobility transistors (HEMTs) ; Time constant spectrum ; Trapping effect
- 刊名：Microelectronics Reliability
- 出版年：2016
- 出版时间：August 2016
- 年：2016
- 卷：63
- 期：Complete
- 页码：46-51
- 全文大小：1264 K
文摘
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A new method for the extraction of the time constants of traps from the current transients is proposed.
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The spatial positions of two traps were identified in the AlGaN barrier layer and the GaN layer, respectively.
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The trap in the AlGaN barrier layer requires sufficient electric field to activate the trapping process
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High drain voltage accelerates the trapping processes both in the AlGaN barrier layer and the GaN layer.