The dielectric charging/discharging in SiN films have been investigated by C-V response in an analogous MIS structure.

The arsenic doping was performed to modify the distribution of energy states in the SiN film to see the effects of arsenic doping on dielectric charging/discharging behaviors. The C-V curves show that low dielectric charging has been obtained in the SiN films after arsenic doping, and the generation and recombination centers were effectively introduced into SiN film.

The I-V curves exhibit that the film conductivity was correspondingly increased after arsenic doping, and the arsenic-doped SiN films still has excellent dielectric characteristic.

This work confirms that the dielectric discharging process can be accelerated for low charge accumulation by doping technology.