Void formation and its impact on CuSn intermetallic compound formation
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- 作者：Glenn Ross ; Glenn.Ross@aalto.fi" class="auth_mail" title="E-mail the corresponding author ; Vesa Vuorinen ; Mervi Paulasto-Krö ; ckel
- 关键词：Void formation ; Kirkendall void ; CuSn system ; Micro-connects ; Electroplating ; Intermetallic compound ; Thermodynamics ; Growth constants ; Activation energy ; Physicochemical approach
- 刊名：Journal of Alloys and Compounds
- 出版年：2016
- 出版时间：25 August 2016
- 年：2016
- 卷：677
- 期：Complete
- 页码：127-138
- 全文大小：3985 K
文摘
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Average void size is proportional linearly to thermal annealing time.
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Average void density grows initially very rapidly followed by saturation.
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Voids located close to the Cu/Cu3Sn interface affect IMC growth rates.
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Voids act as a diffusion barrier inhibiting Cu diffusion towards Sn.
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Voids located at the interface cause Cu3Sn to be consumed by Cu6Sn5.