We optimized epitaxial growth conditions of lead-free relaxor ferroelectrics.
(111) oriented BaTiO<sub>3sub>–Bi(Mg<sub>2/3sub>Nb<sub>1/3sub>)O<sub>3sub> film was grown on Nb:SrTiO<sub>3sub> substrate epitaxially.
High-temperature annealed films showed high dielectric constant exceeding 400.
Dielectric constant stability below 10% was achieved in 75–400 °C temperature range.