Epitaxial growth of high dielectric constant lead-free relaxor ferroelectric for high-temperature operational film capacitor
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- 作者：Somu Kumaragurubaran<sup>asup> ; Takahiro Nagata<sup>asup><sup> ; sup><sup>NAGATA.Takahiro@nims.go.jp" class="auth_mail" title="E-mail the corresponding authorsup> ; Yoshifumi Tsunekawa<sup>asup><sup> ; sup><sup>bsup> ; Kenichiro Takahashi<sup>asup><sup> ; sup><sup>bsup> ; Sung-Gi Ri<sup>asup><sup> ; sup><sup>bsup> ; Setsu Suzuki<sup>asup><sup> ; sup><sup>bsup> ; Toyohiro Chikyow<sup>asup>
- 关键词：Relaxor ferroelectric ; High dielectric constant ; High-temperature operational capacitor ; Pulsed laser deposition
- 刊名：Thin Solid Films
- 出版年：2015
- 出版时间：1 October 2015
- 年：2015
- 卷：592
- 期：part_PA
- 页码：29-33
- 全文大小：810 K
文摘
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We optimized epitaxial growth conditions of lead-free relaxor ferroelectrics.
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(111) oriented BaTiO<sub>3sub>–Bi(Mg<sub>2/3sub>Nb<sub>1/3sub>)O<sub>3sub> film was grown on Nb:SrTiO<sub>3sub> substrate epitaxially.
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High-temperature annealed films showed high dielectric constant exceeding 400.
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Dielectric constant stability below 10% was achieved in 75–400 °C temperature range.