Effect of co-doping concentration on structural, morphological, optical and electrical properties of aluminium and indium co-doped ZnO thin films deposited by ultrasonic spray pyrolysis

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• 作者：Vinoth Kumar Jayaraman ; ^{vkumarj@cinvestav.mx" class="auth_mail" title="E-mail the corresponding author} ; Arturo Maldonado Á ; lvarez ; Yasuhiro Matsumoto Kuwabara ; Yuri Koudriavstev ; Marí ; a de la luz Olvera Amador
• 关键词：Co-doping ; Aluminium ; Indium ; Thin films ; Deposition ; Ultrasonic spray pyrolysis ; ZnO ; TCO
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2016
• 出版时间：1 June 2016
• 年：2016
• 卷：47
• 期：Complete
• 页码：32-36
• 全文大小：1683 K

文摘

In this work, we reported a chemical approach to prepare aluminium and indium co-doped ZnO thin films (AIZO) by ultrasonic spray pyrolysis. Film depositions were carried out on soda lime glass substrates at 425 °C by using a spray solution containing zinc acetate as zinc precursor, aluminium acetylacetonate as Al dopant source and indium (III) acetate as In dopant source. Physical properties such as structural, morphological, optical and electrical properties were studied with respect to the equal variations in co-dopants concentration (0.5–3 at%). X-ray diffraction patterns proved that films are poly crystalline with (002) preferential orientation. Scanning electron microscopy analysis showed that AIZO films grown like hexagonal nanopyramids, elongated grains and irregular trigonals. Optical transmittance ~85% and a minimum resistivity of 1.3×10⁻³ Ω cm, are achieved for films when co-doped with 1.5 at% of Al and 1.5 at% of In, confirm that AIZO films are suitable for transparent conductive oxide (TCO) applications.