Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells
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- 作者：David L. Young ; David.young@nrel.gov" class="auth_mail" title="E-mail the corresponding author ; William Nemeth ; Vincenzo LaSalvia ; Matthew R. Page ; San Theingi ; Jeffery Aguiar ; Benjamin G. Lee ; Paul Stradins
- 关键词：Plasma immersion ion implantation ; Passivated contacts ; Silicon ; Solar cells
- 刊名：Solar Energy Materials and Solar Cells
- 出版年：2016
- 出版时间：December 2016
- 年：2016
- 卷：158
- 期：part_P1
- 页码：68-76
- 全文大小：2532 K
文摘
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PIII ion implantation is used to form pc-Si/SiO2 contacts to c-Si solar cells.
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N-type Jo < 4 fA/cm2, iVoc ~ 730 mV.
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P-type Jo < 35 fA/cm2, iVoc ~690 mV.
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EELS data are shown on the passivated contact structure.
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Al2O3 is used to passivate the pc-Si/SiO2 contact structure.