Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons

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• 作者：Hä ; rkö ; nen ; J. ; Tuovinen ; E. ; Luukka ; P. ; Tuominen ; E. ; Lassila-Perini ; K. ; Mehtä ; lä ; P. ; et. al.
• 关键词：71.55.Cn ; Cz-Si ; Detector ; Radiation hardness
• 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
• 出版年：2004
• 出版时间：February 1, 2004
• 年：2004
• 卷：518
• 期：1-2
• 页码：346-348
• 全文大小：167 K

文摘

We processed pin-diodes on Czochralski silicon (Cz-Si), standard Float Zone silicon (Fz-Si) and oxygenated Fz-Si. The diodes were irradiated with 10, 20, and 30MeV protons. Depletion voltages and leakage currents were measured as a function of the irradiation dose. Additionally, the samples were characterized by TCT and DLTS methods. The high-resistivity Cz-Si was found to be more radiation hard than the other studied materials.