Generalization of the one dimensional modeling and design considerations of spiral Si drift detectors: Flat (straight) drift channels and constant drift fields

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• 作者：Manwen Liu ^{mwliu1993@163.com" class="auth_mail" title="E-mail the corresponding author} ; Zheng Li ; ^{zhengli58@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; ^{lizheng@xtu.edu.cn" class="auth_mail" title="E-mail the corresponding author}
• 关键词：Solid State Detectors
• 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
• 出版年：2016
• 出版时间：11 July 2016
• 年：2016
• 卷：824
• 期：Complete
• 页码：432-433
• 全文大小：291 K

文摘

The one-dimensional design consideration for the spiral (cylindrical geometry) Si drift detector (SDD) has been modified and generalized for small drift distance (R) compatible to the detector thickness (d), i.e. for R–d, and for non uniform backside biasing situations. By applying a non uniform biasing voltage with a gradient similar (proportional) to the front side, one can increase the reach-through voltage, resulting in a large drift field for carriers. This can be important for large R (>3 mm). With a careful design of electric field profiles on both sides, one can obtain the optimum case of a spiral SDD with a straight (flat) drift channel and constant drift field throughout the carrier drift channel. The previous solution in the literature is an approximation of this work for R»d and with a curved drift channel.