Precise quantitative evaluation of the hot-carrier induced drain series resistance degradation in LATID-n-MOSFETs
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文摘
A method is presented which allows to distinguish the drain series resistance increase from other mechanisms contributing to the drain current degradation of hot-carrier stressed n-MOSFETs. Devices with different channel lengths but equal damages are used. The different degradation mechanisms are characterized quantitatively and a model for the drain current degradation is presented. For short stress times, the drain current degradation is dominated by series resistance degradation. For long stress times, however, the contribution of the mechanisms attributed to an “equivalent channel length increase” prevails.