The effect of Inb>xb>Gab>1?xb>N back-barriers on the dislocation densities in Alb>0.31b>Gab>0.69b>N/AlN/GaN/Inb>xb>Gab>1?xb>N/GaN heterostructu

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• 作者：B. Sarikavak-Lisesivdin ; S.B. Lisesivdin ; E. Ozbay
• 关键词：InGaN back-barrier ; MOCVD ; XRD ; Defect analyses
• 刊名：Current Applied Physics
• 出版年：2013
• 出版时间：January, 2013
• 年：2013
• 卷：13
• 期：1
• 页码：224-227
• 全文大小：474 K

文摘

Alb>0.31b>Gab>0.69b>N/AlN/GaN/Inb>xb>Gab>1?xb>N/GaN heterostructures grown with the metal-organic chemical vapor deposition (MOCVD) technique with different Inb>xb>Gab>1?xb>N back-barriers with In mole fractions of 0.05?¡Ü?x?¡Ü?0.14 were investigated by using XRD measurements. Screw, edge, and total dislocations, In mole fraction of back-barriers, Al mole fraction, and the thicknesses of front-barriers and lattice parameters were calculated. Mixed state dislocations with both edge and screw type dislocations were observed. The effects of the In mole fraction difference in the back-barrier and the effect of the thickness of front-barrier on crystal quality are discussed. With the increasing In mole fraction, an increasing dislocation trend is observed that may be due to the growth temperature difference between ultrathin Inb>xb>Gab>1?xb>N back-barrier and the surrounding layers.