Balancing surface area with electron recombination in nanowire-based dye-sensitized solar cells
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- 作者：Luping Lia ; lupingli@ufl.edu" class="auth_mail" title="E-mail the corresponding author ; Cheng Xua ; b ; Yang Zhaoa ; Kirk J. Zieglera ; b ; kziegler@che.ufl.edu" class="auth_mail" title="E-mail the corresponding author
- 关键词：Dye-sensitized solar cell ; Nanowire ; Tin doped indium oxide ; Surface area ; Electron recombination
- 刊名：Solar Energy
- 出版年：2016
- 出版时间：July 2016
- 年：2016
- 卷：132
- 期：Complete
- 页码：214-220
- 全文大小：1444 K
文摘
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Depositing HfO2 on ITO nanowires can reduce electron recombination.
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Balancing the surface area and electron recombination leads to the best efficiency.
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TiO2 annealing temperature needs to be controlled for high efficiency.
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The highest efficiency of 5.59% is achieved for ITO nanowire-based DSSCs.