In-pixel conversion with a 10 bit SAR ADC for next generation X-ray FELs

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• 作者：L. Lodola^a ; ^b ; ^{luca.lodola01@universitadipavia.it" class="auth_mail" title="E-mail the corresponding author} ; G. Batignani^e ; ^f ; M.A. Benkechkache^d ; ^g ; S. Bettarini^e ; ^f ; G. Casarosa^e ; ^f ; D. Comotti^a ; ^b ; G.F. Dalla Betta^c ; ^d ; L. Fabris^b ; ^h ; F. Forti^e ; ^f ; M. Grassi^a ; ^b ; S. Latreche^g ; P. Malcovati^a ; ^b ; M. Manghisoni^b ; ^h ; R. Mendicino^c ; ^d ; F. Morsani^f ; A. Paladino^e ; ^f ; L. Pancheri^c ; ^d ; E. Paoloni^e ; ^f ; L. Ratti^a ; ^b ; V. Re^b ; ^h ; G. Rizzo^e ; ^f ; G. Traversi^b ; ^h ; C. Vacchi^a ; ^b ; G. Verzellesi^d ; ⁱ ; H. Xu^c ; ^d
• 关键词：XFEL ; ADC ; In-pixel conversion ; CMOS
• 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
• 出版年：2016
• 出版时间：11 July 2016
• 年：2016
• 卷：824
• 期：Complete
• 页码：313-315
• 全文大小：599 K

文摘

This work presents the design of an interleaved Successive Approximation Register (SAR) ADC, part of the readout channel for the PixFEL detector. The PixFEL project aims at substantially advancing the state-of-the-art in the field of 2D X-ray imaging for applications at the next generation Free Electron Laser (FEL) facilities. For this purpose, the collaboration is developing the fundamental microelectronic building blocks for the readout channel. This work focuses on the design of the ADC carried out in a 65 nm CMOS technology. To obtain a good tradeoff between power consumption, conversion speed and area occupation, an interleaved SAR ADC architecture was adopted.