文摘
Form halo & PTSP doping profile in fin using an implantation after dummy gate removal. The halo & PTSP dose is adaptive to gate length, enabling VTH variation reduction. The implantation for halo & PTSP does not degrade FinFET performance, SS, and DIBL. Shift VTH by −0.43 V/+0.11 V for N/P-FinFETs by implanting P+/BF2+ into metal gate. Improve N/P-FinFET PBTI/NBTI respectively with P+/BF2+ implanted metal gate.