Behavior of hydride species on Si surface during methane plasma irradiation investigated by in-situ infrared spectroscopy
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- 作者：Shinohara ; Masanori ; Kuwano ; Takayuki ; Kimura ; Yasuo ; Niwano ; Michio
- 关键词：82.80.Ch ; 82.30.Nr ; 82.65.Jv ; Methane plasma ; Si surface ; Infrared absorption ; Hydride species
- 刊名：Thin Solid Films
- 出版年：2003
- 出版时间：July 1, 2003
- 年：2003
- 卷：435
- 期：1-2
- 页码：13-18
- 全文大小：197 K
文摘
We have investigated the behavior of silicon- and carbon-hydride species on the hydrogen-terminated Si(100) surface, during exposure to hydrogen-diluted methane plasma at room temperature, using infrared absorption spectroscopy (IRAS) in the multiple internal reflection (MIR) geometry. We have measured IRAS spectra in the Si
H and CH stretching vibration regions of the Si surface that was irradiated by hydrogen-diluted methane plasma. IRAS data demonstrated that at the initial stage of methane plasma exposure, atomic hydrogen and CH3 radicals stick on the H-terminated surface to increasingly generate C-substituted hydride species, and eventually one monolayer of C-containing hydride species is formed. At this stage of plasma exposure, atomic hydrogen and CH3 radicals attack the Si surfaces to create the so-called SiHn complex at sub-surface regions. A prolonged exposure to methane plasma induced an additional deposition of CHx species onto the monolayer of C-containing hydride species.
H and CH stretching vibration regions of the Si surface that was irradiated by hydrogen-diluted methane plasma. IRAS data demonstrated that at the initial stage of methane plasma exposure, atomic hydrogen and CH3 radicals stick on the H-terminated surface to increasingly generate C-substituted hydride species, and eventually one monolayer of C-containing hydride species is formed. At this stage of plasma exposure, atomic hydrogen and CH3 radicals attack the Si surfaces to create the so-called SiHn complex at sub-surface regions. A prolonged exposure to methane plasma induced an additional deposition of CHx species onto the monolayer of C-containing hydride species.