Graphene-based field effect transistor in two-dimensional paper networks
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- 作者：Aldrine Abenoja Caganga ; Irfan Haider Abidia ; Abhishek Tyagia ; Jie Hub ; c ; Feng Xub ; c ; Tian Jian Lub ; Zhengtang Luoa ; keztluo@ust.hk" class="auth_mail" title="E-mail the corresponding author
- 关键词：Graphene field effect transistors ; Paper analytical devices ; Two-dimensional paper networks ; Paper microfluidics
- 刊名：Analytica Chimica Acta
- 出版年：2016
- 出版时间：21 April 2016
- 年：2016
- 卷：917
- 期：Complete
- 页码：101-106
- 全文大小：1383 K
文摘
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A graphene-based field effect transistor sensor was fabricated for two-dimensional paper network formats.
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The constructed GFET on 2DPN was shown to behave similarly to solution-gated GFETs.
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Electrolyte gating effects have more prominent effect over adsorption effects on the behavior of the device.
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The GFET incorporated on 2DPN was shown to yield linear response to presence of glucose and ssDNA soaked inside the paper.