Structural and optical properties of AlxGa1−xN (0.33 ≤ x ≤ 0.79) layers on high-temperature AlN interlayer grown by metal organic chemical vapor deposition
AlxGa1−xN (0.33 ≤ x ≤ 0.79) eliplayers have grown on HT-AlN interlayer by MOCVD. The screw TDs density evaluated by TEM agrees with that from W-H plots. HT-AlN interlayer can sufficiently reduce TDs through V trenches in the HT-AlN. The optical properties of AlGaN epilayer were characterized by DUV-TIPL and TRPL.