Growth and characterization of GaN:Mn layers by MOVPE

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• 作者：Zdenek Sofer ; David Sedmidubský ; Josef Stejskal ; Jiř ; &#xed ; Hejtm&#xe1 ; nek ; Miroslav Maryš ; ko ; Karel Jurek ; Michal V&#xe1 ; clavů ; Vladim&#xed ; r Havr&#xe1 ; nek ; Anna Mackov&#xe1
• 关键词：A3. Metalorganic vapor-phase epitaxy ; B1. Nitrides ; B2. Magnetic materials ; B2. Semiconducting III– ; V materials
• 刊名：Journal of Crystal Growth
• 出版年：2008
• 出版时间：15 November 2008
• 年：2008
• 卷：310
• 期：23
• 页码：5025-5027
• 全文大小：210 K

文摘

In this paper we present a growth of Ga_1−xMn_xN layers by metalorganic vapor-phase epitaxy (MOVPE). The analysis of the MOVPE deposition process of Ga_1−xMn_xN thin films revealed an unfavorable ratio between the apparent concentration of Mn in the gas phase and its doping level in the deposited layer. On the other hand, the incorporation of Mn has a positive effect on the resulting surface morphology. The optimal deposition temperature of 1000 °C was found out as a compromise between the layer quality and Mn concentration. We observed a ferromagnetic component persisting up to room temperature and a prevailing paramagnetic phase.