Wide variations of SiC_xN_y:H thin films optical constants deposited by H₂/N₂/Ar/hexamethyldisilazane microwave plasma

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• 作者：Simon Bulou ; Laurent Le Brizoual ; Patrice Miska ; Ludovic de Poucques ; Jamal Bougdira ; Mohammed Belmahi
• 关键词：Microwave plasma induced chemical vapor deposition ; SiCN thin films ; Organosilicon compound ; Chemical composition ; Optical constants
• 刊名：Surface and Coatings Technology
• 出版年：2012
• 出版时间：15 September, 2012
• 年：2012
• 卷：208
• 期：Complete
• 页码：46-50
• 全文大小：720 K

文摘

SiC_xN_y:H thin film growth has been achieved in N₂/H₂/Ar/hexamethyldisilazane microwave plasma induced chemical vapor deposition process. Depending on the N₂ and H₂ flow rates, film composition can be changed from ¡°SiC_x:H-like¡± to ¡°SiN_x:H-like¡±. Therefore, refractive index (n) and Tauc's optical gap (Eg) are modified over a wide range of values (1.75 ¡Ü n ¡Ü 2.15 and 3.5 eV ¡Ü Eg ¡Ü 5 eV). In addition, n and Eg values are closely related to SiC bonding density. N₂ addition to the plasma leads to the substitution of SiC by SiN bonds in the film and results in important composition and optical constants variations. This ¡°silane free¡± process appears as an interesting plasma induced chemical vapor deposition process for silicon-based coating synthesis in the field of optical applications.