Electronic characteristics of p-type transparent SnO monolayer with high carrier mobility

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• 作者：Juan Du^a ; Congxin Xia^a ; ^{xiacongxin@htu.edu.cn} ; Yaming Liu^b ; Xueping Li^a ; Yuting Peng^c ; Shuyi Wei^a
• 关键词：SnO ; Monolayer ; p-type ; Carrier mobility
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：15 April 2017
• 年：2017
• 卷：401
• 期：Complete
• 页码：114-119
• 全文大小：1658 K
• 卷排序：401

文摘

SnO monolayer is a p-type transparent semiconducting oxide. The transparent properties can be still maintained under the strain 8%. It has a high hole mobility (∼641 cm2 V−1 s−1), which is higher than that of MoS2 monolayer.