Pulsed electrodeposition of Cu2ZnSnS4 absorber layer precursor for photovoltaic application
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文摘

Potentiostatic pulse plated CZT precursor film from pyrophosphate bath

Fabricated CZTS film from sulfurization of co-electrodeposited CZT precursor film

Kesterite structured CZTS film with secondary phases is observed.

Amount of secondary phases is reduced by increasing the annealing time.

Obtained bandgap of CZTS films is 1.5 eV, suitable for solar cell applications.

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