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• 关键词：Tungsten ; Atomic layer deposition ; Polymers ; Nucleation ; Aluminum oxide
• 刊名：Journal of Mathematical Analysis and Applications
• 出版年：2008
• 出版时间：15 October 2008
• 年：2008
• 卷：346
• 期：2
• 页码：i-iv
• 全文大小：46 K

文摘

Tungsten (W) atomic layer deposition (ALD) was investigated on a variety of polymer films and polymer particles. These polymers included polyethylene, polyvinyl chloride, polystyrene, polycarbonate, polypropylene and polymethylmethacrylate. The W ALD was performed at 80 °C using WF₆ and Si₂H₆ as the gas phase reactants. W ALD on flat polymer films can eventually nucleate and grow after more than 60 AB cycles. X-ray photoelectron spectroscopy studies of W ALD on polystyrene after 50 AB cycles suggested that tungsten nanoclusters are present in the W ALD nucleation regime. The W ALD nucleation is greatly facilitated by a few cycles of Al₂O₃ ALD. W ALD films were grown at 80 °C on spin-coated polymers on silicon wafers after 10 AB cycles of Al₂O₃ ALD. The W ALD film was observed to grow linearly with a growth rate of 3.9 Å per AB cycle on the polymer films treated with the Al₂O₃ ALD seed layer. The W ALD films displayed an excellent, mirror-like optical reflectivity. The resistivity was 100–400 µΩ cm for W ALD films with thicknesses from 95–845 Å. W ALD was also observed on polymer particles after W ALD in a rotary reactor. Without the Al₂O₃ ALD seed layer, the nucleation of W ALD directly on the polymer particles at 80 °C required > 50 AB cycles. In contrast, the polymer particles treated with only 5 AB cycles of Al₂O₃ ALD were observed to blacken after 25 AB cycles of W ALD. W ALD on polymers may have applications for flexible optical mirrors, electromagnetic interference shielding and gas diffusion barriers.